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Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10122EJ03V0DS (3rd edition)
Date Published July 2003
CP(K)
SILICON POWER MOS FET
NE5520379A
3.2 V OPERATION SILICON RF POWER LDMOS FET
FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS
DATA SHEET
The mark ?
shows major revised points.
DESCRIPTION
The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power
amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a
surface mount package. This device can
deliver 34.6 dBm output power with 68% power efficiency at 915 MHz
under the 2.8 V supply voltage.
FEATURES
?
High output power
: Pout
= 35.5 dBm TYP. (VDS
= 3.2 V, VGS
= 2.5 V, f = 915 MHz, Pin
= 25 dBm)
: Pout
= 33.0 dBm TYP. (VDS
= 3.2 V, VGS
= 2.5 V, f = 1 785 MHz, Pin
= 25 dBm)
?
High power added efficiency
: ?add
= 65% TYP. (VDS
= 3.2 V, VGS
= 2.5 V, f = 915 MHz, Pin
= 25 dBm)
: ?add
= 35% TYP. (VDS
= 3.2 V, VGS
= 2.5 V, f = 1 785 MHz, Pin
= 25 dBm)
?
High linear gain
: GL
= 16.0 dB TYP. (VDS
= 3.2 V, VGS
= 2.5 V, f = 915 MHz, Pin
= 10 dBm)
: GL
= 8.5 dB TYP. (VDS
= 3.2 V, VGS
= 2.5 V, f = 1 785 MHz, Pin
= 10 dBm)
?
Surface mount package
: 5.7 ?
5.7 ?
1.1 mm MAX.
?
Single supply
: VDS
= 2.8 to 6.0 V
APPLICATIONS
?
Digital cellular phones
: 3.2
V GSM/DCS Dual-Band handsets
?
Others
: General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
NE5520379A-T1
79A
A3
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 1 kpcs/reel
NE5520379A-T1A
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 5 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5520379A-A
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相关代理商/技术参数
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